A conditional symmetric memristive system with amplitude and frequency control

By introducing a memristor into a chaotic system with a single non-quadratic term and substituting an absolute value function for conditional symmetry, a unique chaotic system is constructed. Firstly, the system shares a special structure of symmetry and conditional symmetry. Secondly, the amplitude and frequency of the system variables can be rescaled by the applied memristor. Interestingly it gives a new case of attractor control namely partial amplitude control and global frequency control. At last, as a new regime of extreme multistability, the memristive system shows relatively simple bifurcation according to the initial condition. This new class of chaotic system has never been reported to the best of our knowledge.

     

Surface passivation in n-type silicon and its application in silicon drift detector

Based on the surface passivation of n-type silicon in a silicon drift detector(SDD), we propose a new passivation structure of SiO2/Al2O3/SiO2 passivation stacks. Since the SiO2 formed by the nitric-acid-oxidation-of-silicon(NAOS)method has good compactness and simple process, the first layer film is formed by the NAOS method. The Al2O3 film is also introduced into the passivation stacks owing to exceptional advantages such as good interface characteristic and simple process. In addition, for requirements of thickness and deposition temperature, the third layer of the SiO2 film is deposited by plasma enhanced chemical vapor deposition(PECVD). The deposition of the SiO2 film by PECVD is a low-temperature process and has a high deposition rate, which causes little damage to the device and makes the SiO2 film very suitable for serving as the third passivation layer. The passivation approach of stacks can saturate dangling bonds at the interface between stacks and the silicon substrate, and provide positive charge to optimize the field passivation of the n-type substrate.The passivation method ultimately achieves a good combination of chemical and field passivations. Experimental results show that with the passivation structure of SiO2/Al2O3/SiO2, the final minority carrier lifetime reaches 5223 μs at injection of 5×10¹⁵ cm^-3. When it is applied to the passivation of SDD, the leakage current is reduced to the order of nA.     

改变激发环境调控Ho3+离子的上转换发光特性

稀土掺杂上转换发光材料的发光特性不仅依赖于基质材料本身,而且与其激发条件密切相关.本文主要是以Ho^3+离子为研究对象,在NaYF4和LiYF4这两种不同的基质中,研究其在不同激发条件下的上转换发光特性.通过共聚焦显微光谱测试系统,对比Ho^3+离子在NaYF4和LiYF4微米晶体中的发光特性.实验结果发现:Ho^3+离子在这两种不同基质中均展现出较强的荧光发射.然而,当激发功率增加时,在单颗粒个LiYF4微米晶体中,当激发功率增加时,Ho^3+离子则发射出较强绿光及微弱的红光,红绿比变化并不明显,其蓝光发射强度也相对较弱.当激发这两种微米粉末晶体时,结果发现:Ho^3+离子均发射较强的绿光发射并伴有微弱红光发射,两种晶体中的发射特性极其相似.由此可见,在常规测试条件下,一些特殊发光现象是很难被观测到的.同时,通过对其光谱特性的分析,对Ho^3+离子的发光机理进行了研究.     

碳纳米管的可控长度拾取及导电性分析

拾取指定长度的半导体性碳纳米管对大规模制造碳纳米管场效应管具有重要意义.本文提出了一种利用原子力显微镜探针和钨针对碳纳米管进行可控长度拾取的方法并进行了碳纳米管导电性分析.在扫描电子显微镜下搭建微纳操作系统,针对切割操作过程中原子力显微镜探针、钨针和碳纳米管的接触情况进行了力学建模和拾取长度误差分析.建立了单根金属性碳纳米管、单根半导体性碳纳米管及碳纳米管束与钨针接触的电路模型,推导了接入不同性质碳纳米管后电路的电流电压特性方程.使用原子力显微镜探针对碳纳米管的空间位姿进行调整,控制钨针对碳纳米管上目标位置进行通电切割,同时获取切割电路中的电流电压数据.实验结果表明,本文提出的方法能够有效控制所拾取碳纳米管的长度,增加碳纳米管与原子力显微镜探针的水平接触长度能够减小碳纳米管形变导致的拾取长度误差,建立的电流电压特性方程能够用于分析碳纳米管的导电性.     

Enantioselective Copper‐Catalyzed Azide–Alkyne Click Cycloaddition to Desymmetrization of Maleimide‐Based Bis(alkynes)

A copper catalyst system derived from TaoPhos and CuF₂ was used successfully for catalytic asymmetric Huisgen [3+2] cycloaddition of azides and alkynes to give optically pure products containing succinimide‐ and triazole‐substituted quaternary carbon stereogenic centers. The desired products were obtained in good yields (60–80 %) and 85:15 to >99:1 enantiomeric ratio (e.r.) in this click cycloaddition reaction.     

Synthesis of Mesoporous Wall‐Structured TiO2 on Reduced Graphene Oxide Nanosheets with High Rate Performance for Lithium‐Ion Batteries

Mesoporous wall‐structured TiO₂ on reduced graphene oxide (RGO) nanosheets were successfully fabricated through a simple hydrothermal process without any surfactants and annealed at 400 °C for 2 h under argon. The obtained mesoporous structured TiO₂–RGO composites had a high surface area (99 0307 m² g^?1) and exhibited excellent electrochemical cycling (a reversible capacity of 260 mAh g^?1 at 1.2 C and 180 mAh g^?1 at 5 C after 400 cycles), demonstrating it to be a promising method for the development of high‐performance Li‐ion batteries.     

Deep oxidative desulfurization of benzothiophene and dibenzothiophene with a peroxophosphotungstate–ionic liquid brush assembly

A novel, efficient and reusable heterogeneous catalytic assembly of peroxophosphotungstate held in an ionic liquid brush was synthesized and an extraction and catalytic oxidative desulfurization (ECODS) procedure was developed for a model oil of benzothiophene (BT) and dibenzothiophene (DBT) using 30 wt% hydrogen peroxide as terminal oxidant and methanol as solvent under mild conditions. Several factors that affect sulfur removal were investigated in detail. The highest sulfur removal can reach 100% for BT in 7 h at 70 °C when the molar ratio of H₂O₂, S and catalyst is 10:1:0.025. The sulfur removal for DBT can also reach 100% in 4 h at 50 °C with the same molar ratio of H₂O₂, S and catalyst. The experimental results demonstrate that this ECODS process has no apparent scale‐up effect. The catalyst can be easily recovered (via simple filtration) and recycled five times without a significant decrease in activity. Copyright © 2015 John Wiley & Sons, Ltd.     

A Disulfide Intercalator Toolbox for the Site‐Directed Modification of Polypeptides

A disulfide intercalator toolbox was developed for site‐specific attachment of a broad variety of functional groups to proteins or peptides under mild, physiological conditions. The peptide hormone somatostatin (SST) served as model compound for intercalation into the available disulfide functionalization schemes starting from the intercalator or the reactive SST precursor before or after bioconjugation. A tetrazole–SST derivative was obtained that undergoes photoinduced cycloaddition in mammalian cells, which was monitored by live‐cell imaging.